SSM6L09FUTE85LF

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SSM6L09FUTE85LF - Toshiba
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Краткое описание: N/P-Ch MOSFET SOT-363 30V 200mA 700mR
Производитель Toshiba
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

Surface mount N-channel and P-channel MOSFET with 30V drain-to-source voltage. Features 200mA continuous drain current and 700mΩ maximum drain-source on-resistance. Includes 85ns turn-on and turn-off delay times, 20pF input capacitance, and 300mW maximum power dissipation. Packaged in SOT-363-6 for tape and reel distribution.
RoHS Compliant
Mount Surface Mount
FET Type N and P-Channel
Polarity N-CHANNEL, P-CHANNEL
Packaging Tape and Reel
Rds On Max 700mR
Package/Case SOT-363-6
Package Quantity 3000
Input Capacitance 20pF
Number of Channels 2
Turn-On Delay Time 85ns
Turn-Off Delay Time 85ns
Max Power Dissipation 300mW
Drain to Source Resistance 4R
Gate to Source Voltage (Vgs) -1.8V
Continuous Drain Current (ID) 200mA
Drain to Source Voltage (Vdss) 30V

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