SSM6L35FU(TE85L,F)
Производится
Увеличить
Краткое описание:
Dual N-Channel P-Channel FET, 20V, 100mA, 200mW, SOT-363-6
Дополнительная информация
The SSM6L35FU(TE85L,F) is a dual N-channel P-channel FET from Toshiba with a maximum drain to source voltage of 20V and a continuous drain current of 100mA. It features a maximum power dissipation of 200mW and a drain to source resistance of 11 ohms. The device is packaged in a SOT-363-6 surface mount package and is RoHS compliant. It has a turn-on delay time of 175ns and a turn-off delay time of 251ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| FET Type | N and P-Channel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Packaging | Tape and Reel |
| Rds On Max | 3R |
| Package/Case | SOT-363-6 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 9.5pF |
| Number of Channels | 2 |
| Turn-On Delay Time | 175ns |
| Turn-Off Delay Time | 251ns |
| Max Power Dissipation | 200mW |
| Drain to Source Resistance | 11R |
| Gate to Source Voltage (Vgs) | -1V |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Voltage (Vdss) | 20V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
