SSM6L36FE,LM
Производится
Краткое описание:
Toshiba SSM6L36FE Dual N/P-Channel MOSFET Array, 20V, 500mA/330mA, SOT-563 (ES6)
Дополнительная информация
The SSM6L36FE is a dual-channel small-signal MOSFET comprising one N-channel and one P-channel transistor in a compact ES6 package. It is designed for high-speed switching applications and features low ON-resistance across a variety of gate-source voltages, including low-voltage drive support down to 1.5V. The device utilizes Toshiba's U-MOSIII technology to provide efficient switching performance for power management and logic level shifting tasks.
| RoHS | RoHS3 Compliant |
| REACH | REACH Unaffected |
| Transistor Polarity | N/P-Channel |
| Total Power Dissipation (Pd) | 150mW |
| Maximum Channel Temperature (Tch) | 150°C |
| Gate-Source Voltage (Vgss) - N-Channel | ±10V |
| Gate-Source Voltage (Vgss) - P-Channel | ±8V |
| Total Gate Charge (Qg) Typ - N-Channel | 1.23nC |
| Drain-Source Voltage (Vdss) - N-Channel | 20V |
| Drain-Source Voltage (Vdss) - P-Channel | -20V |
| Input Capacitance (Ciss) Max - N-Channel | 46pF |
| Continuous Drain Current (Id) - N-Channel | 500mA |
| Continuous Drain Current (Id) - P-Channel | -330mA |
| Gate-Source Threshold Voltage (Vgs th) Max | 1.0V |
| Drain-Source On-Resistance (Rds On) Max - N-Channel | 0.63 (@Vgs=5.0V)Ω |
| Drain-Source On-Resistance (Rds On) Max - P-Channel | 1.31 (@Vgs=-4.5V)Ω |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
