SSM6N05FU(BRA,F)
Снят с производства
Краткое описание:
N-CH MOSFET, Dual, 20V, 0.4A, Si, SOT-363, Surface Mount
Дополнительная информация
Dual N-channel enhancement mode MOSFET, surface mountable in a 6-pin US (SOT-363) package. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.4A. Offers a maximum gate-source voltage of ±12V and a maximum drain-source on-resistance of 800mΩ at 4V. Operates within a temperature range of -55°C to 150°C.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | SOT-363 |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | US |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2002/95/EC |
| Package Weight (g) | 0.0068 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 2 |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 800@4VmOhm |
| Typical Input Capacitance @ Vds | 22@3VpF |
| Maximum Continuous Drain Current | 0.4A |
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