SSM6N16FE(TPL3,F)
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Краткое описание:
N-CH MOSFET, 20V, 0.1A, 6-Pin ES, Dual, Si
Дополнительная информация
N-channel Silicon MOSFET, dual configuration, surface mount with 6-pin ES package. Features 20V drain-source voltage, 0.1A continuous drain current, and ±10V gate-source voltage. Maximum gate threshold voltage is 1.1V, with 3000 mOhm drain-source resistance at 4V. Operates from -55°C to 150°C with 150mW maximum power dissipation.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| Category | Small Signal |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | ES |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.5 |
| Package Material | Plastic |
| Package Weight (g) | 0.003 |
| Package Width (mm) | 1.2 |
| Package Length (mm) | 1.6 |
| Seated Plane Height (mm) | 0.55 |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 150mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±10V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Threshold Voltage | 1.1V |
| Maximum Drain Source Resistance | 3000@4VmOhm |
| Typical Input Capacitance @ Vds | 9.3@3VpF |
| Maximum Continuous Drain Current | 0.1A |
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