SSM6N57NU
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Краткое описание:
N-CH MOSFET 30V 4A 6-Pin UDFN EP SMT
Дополнительная информация
N-channel enhancement mode MOSFET, dual configuration, designed for surface mounting. Features a 6-pin UDFN EP package with a 2mm x 2mm footprint and 0.65mm pin pitch. Operates with a maximum drain-source voltage of 30V and a continuous drain current of 4A. Offers low on-resistance of 30mOhm at 4.5V gate-source voltage. Utilizes U-MOS VII-H process technology for efficient performance.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | UDFN EP |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Basic Package Type | Non-Lead-Frame SMT |
| Package Weight (g) | 0.0085 |
| Package Width (mm) | 2 |
| Process Technology | U-MOS VII-H |
| Package Description | Micro Dual Flat Package No Lead, Exposed Pad |
| Package Family Name | DFN |
| Package Height (mm) | 0.75(Max) |
| Package Length (mm) | 2 |
| Seated Plane Height (mm) | 0.75 |
| Maximum Power Dissipation | 2000mW |
| Maximum Gate Source Voltage | ±12V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 310pF |
| Maximum Continuous Drain Current | 4A |
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