SSM6N7002BFU

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SSM6N7002BFU - Toshiba
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Краткое описание: N-CH MOSFET 60V 0.2A Dual Si SOT-363 6-Pin SM
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (LTB)

Дополнительная информация

N-channel enhancement mode MOSFET, dual configuration, designed for small signal applications. Features a 60V maximum drain-source voltage and 0.2A maximum continuous drain current. Housed in a compact 6-pin US package (SOT-363) with surface mount capability, measuring 2mm x 1.25mm x 0.9mm. Operates within a temperature range of -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
Jedec SOT-363
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type N
Package/Case US
AEC Qualified No
Configuration Dual
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 60V
Maximum Drain Source Resistance 2100@10VmOhm
Typical Input Capacitance @ Vds 17@25VpF
Maximum Continuous Drain Current 0.2A

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