SSM6N7002FU(L,F,T)
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
N-CH MOSFET 60V 0.2A Dual Si SOT-363 Surface Mount
Дополнительная информация
N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 0.2A continuous drain current. This dual-configuration transistor is housed in a compact 6-pin US package (SOT-363) with surface mount capability. Key electrical characteristics include a maximum gate threshold voltage of 2.5V and a maximum drain-source on-resistance of 3000 mOhm at 10V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 300mW.
| PCB | 6 |
| ECCN | EAR99 |
| PPAP | No |
| Jedec | SOT-363 |
| EU RoHS | Yes |
| Category | Power MOSFET |
| HTS Code | 8541210095 |
| Material | Si |
| Mounting | Surface Mount |
| Cage Code | S0562 |
| Pin Count | 6 |
| Automotive | No |
| Schedule B | 8541210080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | US |
| AEC Qualified | No |
| Configuration | Dual |
| RoHS Versions | 2002/95/EC |
| Package Weight (g) | 0.0068 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Package Length (mm) | 2 |
| Seated Plane Height (mm) | 1.1(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 3000@10VmOhm |
| Typical Input Capacitance @ Vds | 17@25VpF |
| Maximum Continuous Drain Current | 0.2A |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
