SSM6P09FU(TE85L,F)

Не рекомендуется для новых проектов
SSM6P09FU(TE85L,F) - Toshiba
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Краткое описание: P-CH MOSFET 30V 0.2A Dual Si SOT-363 Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NRND)

Дополнительная информация

P-channel, enhancement mode MOSFET for small signal applications. Features a 30V drain-source voltage rating and a 0.2A continuous drain current. Housed in a 6-pin SOT-363 (US) surface-mount package with dimensions of 2mm x 1.25mm x 0.9mm. Dual transistor configuration with a maximum power dissipation of 300mW and an operating temperature range of -55°C to 150°C.
PCB 6
ECCN EAR99
PPAP No
Jedec SOT-363
EU RoHS Yes
Category Small Signal
HTS Code 8541210095
Material Si
Mounting Surface Mount
Cage Code S0562
Pin Count 6
Automotive No
Schedule B 8541210080
Channel Mode Enhancement
Channel Type P
Package/Case US
AEC Qualified No
Configuration Dual
RoHS Versions 2002/95/EC
Package Weight (g) 0.0068
Package Width (mm) 1.25
Package Height (mm) 0.9
Package Length (mm) 2
Radiation Hardening No
Seated Plane Height (mm) 1.1(Max)
Max Operating Temperature 150°C
Maximum Power Dissipation 300mW
Min Operating Temperature -55°C
Maximum Gate Source Voltage ±20V
Number of Elements per Chip 2
Maximum Drain Source Voltage 30V
Maximum Drain Source Resistance 2700@10VmOhm
Typical Input Capacitance @ Vds 22@5VpF
Maximum Continuous Drain Current 0.2A

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