SSM6P47NU,LF

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SSM6P47NU,LF - Toshiba
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Краткое описание: P-Channel MOSFET 20V 4A 1W Surface Mount
Производитель Toshiba
Категория MOSFET
Статус производства Производится (VOLUME PRODUCTION)

Дополнительная информация

The SSM6P47NU,LF is a P-channel MOSFET with a drain to source breakdown voltage of -20V and a maximum power dissipation of 1W. It features a continuous drain current of 4A and a drain to source resistance of 242mR. The device is packaged in a surface mount package and is available on tape and reel. The operating temperature range is not specified, but it is suitable for use in a variety of applications. The SSM6P47NU,LF is manufactured by Toshiba and is a discrete semiconductor device.
RoHS Compliant
Mount Surface Mount
Polarity P-CHANNEL
Packaging Tape and Reel
Rds On Max 95mR
Package Quantity 1
Input Capacitance 290pF
Power Dissipation 1W
Max Power Dissipation 1W
Drain to Source Resistance 242mR
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4A
Drain to Source Voltage (Vdss) 20V
Drain to Source Breakdown Voltage -20V

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