SSM8402
Краткое описание:
Dual N/P-CH MOSFET 30V 6.2A/5A SO 8-Pin SMT
Дополнительная информация
Dual N/P-channel enhancement mode power MOSFETs in an 8-pin SO package. Features 30V drain-source voltage, 6.2A continuous drain current for N-channel and 5A for P-channel. Offers low on-resistance of 32mOhm (N-channel) and 45mOhm (P-channel) at 10V Vgs. Surface mountable with gull-wing leads, this plastic package has dimensions of 4.98mm x 3.99mm x 1.75mm. Operating temperature range is -55°C to 150°C.
| PCB | 8 |
| ECCN | EAR99 |
| PPAP | No |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Package/Case | SO |
| AEC Qualified | No |
| Configuration | Dual Dual Drain |
| RoHS Versions | 2002/95/EC |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 3.99(Max) |
| Package Description | Small Outline IC |
| Package Family Name | SOP |
| Package Height (mm) | 1.75(Max) |
| Package Length (mm) | 4.98(Max) |
| Radiation Hardening | No |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 13.5@N Channel|17.5@P ChannelnC |
| Typical Gate Charge @ Vgs | 13.5@10V|[email protected]@N Channel|17.5@10V|[email protected]@P ChannelnC |
| Maximum Gate Source Voltage | ±20V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Drain Source Resistance | 32@10V@N Channel|45@10V@P ChannelmOhm |
| Typical Input Capacitance @ Vds | 520@15V@N Channel|625@15V@P ChannelpF |
| Maximum Continuous Drain Current | 6.2@N Channel|5@P ChannelA |
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