SSTA28T116
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Краткое описание:
NPN BJT 80V 300mA 200MHz SOT-23 SMD Transistor
Дополнительная информация
NPN silicon bipolar junction transistor for small signal applications. Features 80V collector-emitter breakdown voltage (VCEO) and 300mA maximum collector current. Operates with a transition frequency of 200MHz and offers a minimum hFE of 10000. Packaged in a SOT-23 surface-mount case, this RoHS compliant component is designed for tape and reel packaging.
| RoHS | Compliant |
| Mount | Surface Mount |
| hFE Min | 10000 |
| Polarity | NPN |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Termination | SMD/SMT |
| Package/Case | SOT-23 |
| Current Rating | 300mA |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| Package Quantity | 1 |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 300mA |
| Max Power Dissipation | 200mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Emitter Base Voltage (VEBO) | 12V |
| Collector Base Voltage (VCBO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
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