STB11N65M5
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Краткое описание:
650V 9A N-CH MOSFET D2PAK, 480mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 9A continuous drain current. Offers a low 480mΩ typical drain-to-source resistance. Designed for surface mounting in a D2PAK package, this component operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 85W. Includes 23ns turn-on and turn-off delay times.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 480mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 644pF |
| Power Dissipation | 85W |
| Turn-On Delay Time | 23ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 23ns |
| Max Power Dissipation | 85W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 480mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 650V |
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