STB11NK40ZT4

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STB11NK40ZT4 - Stmicroelectronics
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Краткое описание: 400V 9A N-CH MOSFET D2PAK 550mR RdsOn
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel SuperMESH™ Power MOSFET, 400V Drain-Source Breakdown Voltage, 9A Continuous Drain Current, and 550mΩ Max Drain-Source On-Resistance. Features a D2PAK surface mount package, 110W maximum power dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with 18ns fall time, 20ns turn-on delay, and 40ns turn-off delay. RoHS compliant and lead-free.
RoHS Compliant
Mount Surface Mount
Width 10.4mm
Height 4.6mm
Length 10.75mm
Series SuperMESH™
Polarity N-CHANNEL
Fall Time 18ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 550mR
Package/Case D2PAK
Current Rating 9A
RoHS Compliant Yes
DC Rated Voltage 400V
Package Quantity 1
Input Capacitance 930pF
Power Dissipation 110W
Threshold Voltage 3.75V
Number of Elements 1
Turn-On Delay Time 20ns
Radiation Hardening No
Turn-Off Delay Time 40ns
Reach SVHC Compliant No
Max Power Dissipation 110W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Drain to Source Resistance 550mR
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 9A
Drain to Source Voltage (Vdss) 400V
Drain-source On Resistance-Max 550mR
Drain to Source Breakdown Voltage 400V