STB11NK50ZT4
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Краткое описание:
500V 10A N-CH MOSFET D2PAK, 0.48 Ohm Rds(on)
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 500V drain-source breakdown voltage and 10A continuous drain current. This surface-mount device offers a low 480mΩ typical drain-source on-resistance and 520mΩ maximum. Designed for high-power applications with 125W power dissipation, it operates within a -55°C to 150°C temperature range and includes Zener protection. The D2PAK package facilitates efficient thermal management.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 520mR |
| Nominal Vgs | 3.75V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 10A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1000 |
| Input Capacitance | 1.39nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 14.5ns |
| Dual Supply Voltage | 500V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 480mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 520mR |
| Drain to Source Breakdown Voltage | 500V |
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