STB11NM60-1
Снят с производства
Краткое описание:
600V N-CH MOSFET, 11A, 450mR, I2PAK Power Transistor
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. This MDmesh™ series component offers a low 450mΩ Rds On and 11ns fall time, with a maximum power dissipation of 160W. Designed for through-hole mounting in a TO-262-3 package, it operates from -65°C to 150°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Rail/Tube |
| Rds On Max | 450mR |
| Package/Case | TO-262-3 |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| Package Quantity | 50 |
| Input Capacitance | 1nF |
| Power Dissipation | 160W |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 6ns |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 450mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain to Source Breakdown Voltage | 600V |
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