STB11NM80T4
Производится
Увеличить
Краткое описание:
800V 11A N-CH MOSFET D2PAK 400mR Rds(on)
Дополнительная информация
N-channel MDmesh™ Power MOSFET featuring 800V drain-source breakdown voltage and 11A continuous drain current. Surface mount D2PAK package offers 400mΩ maximum drain-source on-resistance. Key switching characteristics include a 15ns fall time, 22ns turn-on delay, and 46ns turn-off delay. Maximum power dissipation is 150W with an operating temperature range of -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 15ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 400mR |
| Package/Case | D2PAK |
| Current Rating | 11A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 1.63nF |
| Power Dissipation | 150W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 22ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 46ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 400mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 400mR |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
