STB12NK80ZT4
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Краткое описание:
800V N-Ch MOSFET, 10.5A, 750mR, D2PAK
Дополнительная информация
N-channel SuperMESH™ Power MOSFET, 800V drain-source breakdown voltage, 10.5A continuous drain current, and 750mΩ maximum drain-source on-resistance. Features Zener protection, 190W power dissipation, and a D2PAK surface-mount package. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Includes 2.62nF input capacitance and fast switching times with 30ns turn-on and 70ns turn-off delays.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 750mR |
| Nominal Vgs | 3.75V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 10.5A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 2.62nF |
| Power Dissipation | 190W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 30ns |
| Dual Supply Voltage | 800V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 750mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 10.5A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 750mR |
| Drain to Source Breakdown Voltage | 800V |
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