STB12NM50T4
Производится
Увеличить
Краткое описание:
500V 12A N-CH MOSFET D2PAK 350mR
Дополнительная информация
N-channel power MOSFET featuring 500V drain-source breakdown voltage and 12A continuous drain current. Offers low 350mΩ maximum drain-source on-resistance and 160W power dissipation. Designed for surface mounting in a D2PAK package, this component operates within a -65°C to 150°C temperature range and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 350mR |
| Nominal Vgs | 4V |
| Package/Case | D2PAK |
| Current Rating | 12A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 550V |
| Package Quantity | 1 |
| Input Capacitance | 1nF |
| Power Dissipation | 160W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 350mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 550V |
| Drain-source On Resistance-Max | 350mR |
| Drain to Source Breakdown Voltage | 500V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
