STB13N60M2
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Краткое описание:
600V N-CH MOSFET, 11A, 380mR, D2PAK, Surface Mount
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This surface mount device offers a low 380mΩ maximum drain-source on-resistance and 110W power dissipation. Designed for high-frequency switching, it exhibits a typical fall time of 9.5ns and turn-on delay of 11ns. Encased in a D2PAK package, this RoHS compliant component operates from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 9.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 580pF |
| Power Dissipation | 110W |
| Turn-On Delay Time | 11ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 41ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380mR |
| Drain to Source Breakdown Voltage | 650V |
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