STB13NM60N
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Краткое описание:
600V 11A N-CH Power MOSFET, D2PAK, Surface Mount
Дополнительная информация
N-channel Power MOSFET, 600V drain-source voltage, 11A continuous drain current, and 360mOhm maximum drain-source resistance. This surface-mount device features a D2PAK package with gull-wing leads, a 3-pin configuration, and is constructed using MDmesh II process technology. It offers a maximum power dissipation of 90W and operates within a temperature range of -55°C to 150°C.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.35(Max) |
| Process Technology | MDmesh II |
| Package Description | Double Deca Watt Package |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.6(Max) |
| Package Length (mm) | 10.4(Max) |
| Radiation Hardening | No |
| Seated Plane Height (mm) | 4.83(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 27nC |
| Typical Gate Charge @ Vgs | 27@10VnC |
| Maximum Gate Source Voltage | ±25V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Drain Source Resistance | 360@10VmOhm |
| Typical Input Capacitance @ Vds | 790@50VpF |
| Maximum Continuous Drain Current | 11A |
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