STB14NK50ZT4
Производится
Увеличить
Краткое описание:
500V 14A N-Ch MOSFET, 380mR Rds(on), D2PAK, Zener-Protected
Дополнительная информация
N-Channel POWER MOSFET featuring 500V Drain to Source Breakdown Voltage and 14A Continuous Drain Current. This SuperMesh™ device offers a low 380mΩ Drain-Source On-Resistance and 150W Max Power Dissipation. Designed for surface mount applications, it utilizes a D2PAK package and supports a Gate to Source Voltage of 30V. Key switching characteristics include a 24ns Turn-On Delay Time and 12ns Fall Time. This RoHS compliant component operates within a -55°C to 150°C temperature range.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 12ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 380mR |
| Nominal Vgs | 3.75V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 14A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| Package Quantity | 1000 |
| Input Capacitance | 2nF |
| Power Dissipation | 150W |
| Threshold Voltage | 3.75V |
| Turn-On Delay Time | 24ns |
| Dual Supply Voltage | 500V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 54ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 380mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 380MR |
| Drain to Source Breakdown Voltage | 500V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
