STB15N65M5
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Краткое описание:
650V N-CH MOSFET, 11A, 340mR RdsOn, D2PAK
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 11A continuous drain current. Offers a low 0.308 Ohm typical drain-source on-resistance, with a maximum of 340mR. Encased in a surface-mount D2PAK package, this component operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 85W. RoHS compliant and lead-free, it includes a gate-source voltage rating of 25V.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 340mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 810pF |
| Power Dissipation | 85W |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 30ns |
| Max Power Dissipation | 85W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 340mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 340MR |
| Drain to Source Breakdown Voltage | 650V |
