STB18N60M2
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Краткое описание:
600V 13A N-CH MOSFET D2PAK, 255mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 13A continuous drain current. This surface-mount device offers a low 255mΩ typical drain-source on-resistance, packaged in a D2PAK for efficient thermal management. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 110W and is RoHS compliant. Key switching characteristics include a 12ns turn-on delay and 10.6ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 10.6ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 280mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 791pF |
| Power Dissipation | 110W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 47ns |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 255mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 280mR |
| Drain to Source Breakdown Voltage | 600V |
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