STB18NM60N
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Краткое описание:
600V 13A N-CH MOSFET D2PAK 285mR Power TO-263
Дополнительная информация
N-Channel Power MOSFET, D2PAK package, offering 600V drain-source voltage and 13A continuous drain current. Features a maximum on-resistance of 285mΩ at a nominal gate-source voltage of 3V. Designed for surface mounting with a maximum power dissipation of 110W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 12ns and fall time of 25ns. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ II |
| Fall Time | 25ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 285mR |
| Nominal Vgs | 3V |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1nF |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 285mR |
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