STB200NF03T4
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Краткое описание:
N-CH 30V 120A 3.2mR D2PAK Power MOSFET
Дополнительная информация
N-channel power MOSFET in a D2PAK package, featuring 30V drain-source breakdown voltage and 120A continuous drain current. Offers low 3.2mΩ drain-to-source resistance at a nominal 4V gate-source voltage. Operates with a maximum gate-source voltage of 20V and a maximum power dissipation of 300W. This surface-mount device boasts a maximum operating temperature of 175°C and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ III |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 3.6mR |
| Nominal Vgs | 4V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 120A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 30V |
| Package Quantity | 1 |
| Input Capacitance | 4.95nF |
| Power Dissipation | 300W |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 30ns |
| Dual Supply Voltage | 30V |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 3.2mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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