STB200NF04L

Снят с производства
STB200NF04L - Stmicroelectronics
Краткое описание: 120A 40V 3.5mR N-CH Power MOSFET D2PAK
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-Channel Power MOSFET, D2PAK package, featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.5mΩ maximum drain-source on-resistance. Operates with a 16V gate-source voltage and exhibits fast switching speeds with turn-on delay of 37ns and fall time of 80ns. Designed for surface mounting with a maximum power dissipation of 300W and a maximum operating temperature of 175°C. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Series STripFET™ II
Polarity N-CHANNEL
Fall Time 80ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 3.5mR
Nominal Vgs 4V
Termination SMD/SMT
Package/Case D2PAK
Current Rating 120A
RoHS Compliant Yes
DC Rated Voltage 40V
Package Quantity 1
Input Capacitance 6.4nF
Power Dissipation 300W
Number of Elements 1
Turn-On Delay Time 37ns
Dual Supply Voltage 40V
Radiation Hardening No
Turn-Off Delay Time 90ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 3.5mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 120A
Drain to Source Voltage (Vdss) 40V
Drain-source On Resistance-Max 3.5MR
Drain to Source Breakdown Voltage 40V

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