STB20NM60D
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Краткое описание:
600V 20A N-CH MOSFET D2PAK, 290mR RdsOn
Дополнительная информация
N-channel power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. Offers a low 290mΩ maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a 192W maximum power dissipation and operates within a temperature range of -65°C to 150°C. Includes fast switching characteristics with a 22ns fall time and 25ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 290mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.3nF |
| Power Dissipation | 192W |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Max Power Dissipation | 192W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 290mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 290mR |
| Drain to Source Breakdown Voltage | 600V |
