STB20NM60T4
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Краткое описание:
600V 20A N-Channel MOSFET D2PAK
Дополнительная информация
N-Channel MOSFET, 600V Drain to Source Breakdown Voltage, 20A Continuous Drain Current, and 290mR Max Drain-Source On Resistance. Features a D2PAK surface mount package, 192W Power Dissipation, and operates within a -65°C to 150°C temperature range. Includes 11ns Fall Time, 25ns Turn-On Delay, and 42ns Turn-Off Delay. RoHS compliant and Lead Free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 11ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 290mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| DC Rated Voltage | 650V |
| Package Quantity | 1 |
| Input Capacitance | 1.5nF |
| Power Dissipation | 192W |
| Number of Elements | 1 |
| Turn-On Delay Time | 25ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 42ns |
| Max Power Dissipation | 192W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 290mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 290mR |
| Drain to Source Breakdown Voltage | 600V |
