STB23NM50N
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Краткое описание:
500V N-CH MOSFET, 17A, 162mR, D2PAK, Power
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 17A continuous drain current. Offers low on-resistance with a maximum of 190mR at 10V Vgs. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 6.6ns turn-on delay and a 29ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 190mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.33nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 6.6ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 71ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 162mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 190mR |
| Drain to Source Breakdown Voltage | 500V |
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