STB23NM60ND
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Краткое описание:
600V 19.5A N-CH MOSFET D2PAK 180mR
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 19.5A continuous drain current. This surface-mount device offers a low 180mΩ Rds On and 150W power dissipation, suitable for demanding applications. Integrated fast diode and FDmesh™ II technology enhance performance with rapid switching characteristics, including 21ns turn-on and 40ns fall times. Packaged in a D2PAK for efficient thermal management, operating from -55°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | FDmesh™ |
| Polarity | N-CHANNEL |
| Fall Time | 40ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 180mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 2.05nF |
| Power Dissipation | 150W |
| Threshold Voltage | 4V |
| Number of Elements | 1 |
| Turn-On Delay Time | 21ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 90ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 150W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 180mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 19.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain to Source Breakdown Voltage | 600V |
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