STB24NM60N
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Краткое описание:
600V 17A N-CH MOSFET D2PAK, 168mR Rds(on)
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers low on-resistance with a maximum of 190mR at 10Vgs. Designed for surface mounting in a TO-263 package, this component boasts a 125W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 37ns fall time and 11.5ns turn-on delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 37ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 190mR |
| Package/Case | TO-263 |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 1.4nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 11.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 73ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 168mR |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Drain to Source Breakdown Voltage | 600V |
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