STB25N80K5
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Краткое описание:
800V N-CH Power MOSFET, 19.5A, D2PAK SMT
Дополнительная информация
N-channel Power MOSFET, 800V drain-source voltage, 19.5A continuous drain current. Features SuperMESH process technology, 260mOhm maximum drain-source resistance at 10V, and 40nC typical gate charge. Housed in a 3-pin D2PAK (TO-263) surface-mount plastic package with gull-wing leads, measuring 10.4mm x 9.35mm x 4.6mm. Operates from -55°C to 150°C with a maximum power dissipation of 250W.
| PCB | 2 |
| Tab | Tab |
| ECCN | EAR99 |
| PPAP | No |
| EU RoHS | Yes with Exemption |
| Category | Power MOSFET |
| HTS Code | 8541290095 |
| Mounting | Surface Mount |
| Cage Code | SCR76 |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Schedule B | 8541290080 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package/Case | D2PAK |
| AEC Qualified | No |
| Configuration | Single |
| RoHS Versions | 2011/65/EU, 2015/863 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Basic Package Type | Lead-Frame SMT |
| Package Width (mm) | 9.35(Max) |
| Process Technology | SuperMESH |
| Package Description | Double Deca Watt Package |
| Package Family Name | TO-263 |
| Package Height (mm) | 4.6(Max) |
| Package Length (mm) | 10.4(Max) |
| Seated Plane Height (mm) | 4.83(Max) |
| Max Operating Temperature | 150°C |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Typical Gate Charge @ 10V | 40nC |
| Typical Gate Charge @ Vgs | 40@10VnC |
| Maximum Gate Source Voltage | ±30V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 260@10VmOhm |
| Typical Input Capacitance @ Vds | 1600@100VpF |
| Maximum Continuous Drain Current | 19.5A |
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