STB25NM50N
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Краткое описание:
500V 22A N-CH MOSFET, 140mR, D2PAK, Power
Дополнительная информация
N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 22A continuous drain current. This surface-mount device offers a low 140mΩ Rds(on) at a nominal Vgs of 3V, with a maximum power dissipation of 160W. Designed for efficient switching, it exhibits a 22ns fall time and 75ns turn-off delay. The component is housed in a D2PAK package and is RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | MDmesh™ II |
| Polarity | N-CHANNEL |
| Fall Time | 22ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 140mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 22A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 550V |
| Package Quantity | 1 |
| Input Capacitance | 2.565nF |
| Power Dissipation | 160W |
| Threshold Voltage | 3V |
| Dual Supply Voltage | 500V |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 160W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 140mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 500V |
| Drain to Source Breakdown Voltage | 500V |
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