STB30NF10T4
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Краткое описание:
100V 35A N-CH MOSFET D2PAK 38mR Low Gate Charge
Дополнительная информация
N-Channel MOSFET, D2PAK package, 100V Drain-Source Voltage (Vdss), 35A Continuous Drain Current (ID). Features low 38mΩ Drain-Source On-Resistance (Rds On) at Vgs=10V, 1.18nF input capacitance, and 115W maximum power dissipation. Operates from -55°C to 175°C with fast switching speeds, including 15ns turn-on and 10ns fall times. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 45mR |
| Package/Case | D2PAK |
| Current Rating | 35A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Package Quantity | 1 |
| Input Capacitance | 1.18nF |
| Power Dissipation | 115W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 15ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 115W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 38mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 45mR |
| Drain to Source Breakdown Voltage | 100V |
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