STB34NM60N

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STB34NM60N - Stmicroelectronics
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Краткое описание: 600V N-Ch MOSFET, 29A, 0.092 Ohm, D2PAK, Surface Mount
Производитель Stmicroelectronics
Статус производства Производится (ACTIVE)

Дополнительная информация

N-channel Power MOSFET featuring 600V drain-source voltage and 29A continuous drain current. This surface mount device offers a low 0.092 Ohm typical on-resistance (105mR max) and 3V threshold voltage. Designed for high efficiency, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 210W. The TO-263 package, measuring 10.75mm x 10.4mm x 4.6mm, is suitable for tape and reel packaging.
RoHS Compliant
Mount Surface Mount
Width 10.4mm
Height 4.6mm
Length 10.75mm
Series MDmesh™ II
Fall Time 70ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 105mR
Nominal Vgs 3V
Package/Case TO-263
RoHS Compliant Yes
Package Quantity 1
Input Capacitance 2.722nF
Threshold Voltage 3V
Turn-On Delay Time 17ns
Radiation Hardening No
Turn-Off Delay Time 106ns
Reach SVHC Compliant No
Max Power Dissipation 210W
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 29A
Drain to Source Voltage (Vdss) 600V

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