STB40NS15T4

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STB40NS15T4 - Stmicroelectronics
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Краткое описание: 150V 40A N-CH MOSFET, 52mR RdsOn, D2PAK, Power
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Снят с производства (OBSOLETE)

Дополнительная информация

N-CHANNEL Power MOSFET, D2PAK package, featuring 150V drain-source breakdown voltage and 40A continuous drain current. Offers a low 52mΩ maximum drain-source on-resistance and 300W maximum power dissipation. Operates across a wide temperature range from -65°C to 175°C with fast switching times including 25ns turn-on and 35ns fall times. Surface mountable with tape and reel packaging, this RoHS compliant component is designed for high-power applications.
RoHS Compliant
Mount Surface Mount
Width 9.35mm
Height 4.6mm
Length 10.4mm
Series MESH OVERLAY™
Polarity N-CHANNEL
Fall Time 35ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 52mR
Nominal Vgs 3V
Termination SMD/SMT
Package/Case D2PAK
Current Rating 40A
RoHS Compliant Yes
DC Rated Voltage 150V
Package Quantity 1
Input Capacitance 2.42nF
Power Dissipation 300W
Turn-On Delay Time 25ns
Dual Supply Voltage 150V
Radiation Hardening No
Turn-Off Delay Time 85ns
Reach SVHC Compliant No
Max Power Dissipation 300W
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Drain to Source Resistance 45mR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 40A
Drain to Source Voltage (Vdss) 150V
Drain-source On Resistance-Max 45mR
Drain to Source Breakdown Voltage 150V