STB45NF06T4
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Краткое описание:
60V 38A N-CH MOSFET D2PAK, 28mR RdsOn
Дополнительная информация
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 38A continuous drain current. This surface mount device offers a low 23mΩ maximum drain-source on-resistance at a nominal 3V gate-source voltage. Designed for high efficiency, it boasts a maximum power dissipation of 80W and operates across a wide temperature range from -65°C to 175°C. The D2PAK package facilitates efficient heat dissipation, with typical fall and turn-on delay times of 10ns and 12ns respectively.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 10ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 28mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 980pF |
| Power Dissipation | 80W |
| Threshold Voltage | 3V |
| Turn-On Delay Time | 12ns |
| Dual Supply Voltage | 60V |
| Turn-Off Delay Time | 28ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 80W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 28mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 23mR |
| Drain to Source Breakdown Voltage | 60V |
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