STB4N62K3
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Краткое описание:
620V 3.8A N-CH MOSFET, 1.95R, D2PAK, TO-263
Дополнительная информация
N-channel power MOSFET featuring 620V drain-source breakdown voltage and 3.8A continuous drain current. Offers a low 1.95-ohm maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this RoHS compliant component boasts fast switching speeds with a 10ns turn-on delay and 19ns fall time. Maximum power dissipation is rated at 70W.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.95R |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1000 |
| Input Capacitance | 450pF |
| Power Dissipation | 70W |
| Number of Elements | 1 |
| Turn-On Delay Time | 10ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 29ns |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.95R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.95R |
| Drain to Source Breakdown Voltage | 620V |
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