STB55NF06LT4
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Краткое описание:
60V 55A N-CH MOSFET D2PAK 18mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 55A continuous drain current. Offers a low 14mΩ typical drain-source on-resistance at 1.7V threshold voltage. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 95W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 20ns turn-on delay and 20ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | NexFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 18mR |
| Package/Case | D2PAK |
| Current Rating | 55A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 1.7nF |
| Power Dissipation | 95W |
| Threshold Voltage | 1.7V |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 95W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 14mR |
| Gate to Source Voltage (Vgs) | 16V |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 18MR |
| Drain to Source Breakdown Voltage | 60V |
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