STB57N65M5
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Краткое описание:
650V 42A N-CH MOSFET D2PAK 63mR RdsOn
Дополнительная информация
N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 42A continuous drain current. Offers a low 63mΩ maximum drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component boasts a 250W maximum power dissipation and operates within a -55°C to +150°C temperature range. Key switching characteristics include a 19ns fall time and 12ns turn-off delay.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | MDmesh™ V |
| Polarity | N-CHANNEL |
| Fall Time | 19ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 63mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Input Capacitance | 4.2nF |
| Power Dissipation | 250W |
| Threshold Voltage | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 73ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 12ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 250W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 63mR |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 63mR |
| Drain to Source Breakdown Voltage | 650V |
