STB5N62K3
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Краткое описание:
620V 4.2A 1.6R N-CH Power MOSFET D2PAK
Дополнительная информация
N-channel power MOSFET with 620V drain-source breakdown voltage and 4.2A continuous drain current. Features 1.6 ohm maximum drain-source on-resistance and 70W power dissipation. Surface-mount D2PAK package with 21ns fall time and 12ns turn-on delay. Operates from -55°C to 150°C, with 680pF input capacitance and 3.75V threshold voltage. RoHS compliant.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | SuperMESH3™ |
| Polarity | N-CHANNEL |
| Fall Time | 21ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.6R |
| Nominal Vgs | 3.75V |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 680pF |
| Power Dissipation | 70W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 12ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 40ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 70W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.6R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 1.6R |
| Drain to Source Breakdown Voltage | 620V |
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