STB60NF06T4
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Краткое описание:
60V 60A N-Ch MOSFET D2PAK 16mR Rds(on)
Дополнительная информация
N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 60A continuous drain current. This surface-mount device offers a low 16mΩ maximum drain-source on-resistance and 110W power dissipation. Designed with a 3V gate threshold voltage and 20V gate-to-source voltage rating, it exhibits typical turn-on delay of 16ns and fall time of 20ns. Packaged in D2PAK for tape and reel, this RoHS compliant component operates from -65°C to 150°C.
| RoHS | Compliant |
| Mount | Surface Mount |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 16mR |
| Nominal Vgs | 3V |
| Termination | SMD/SMT |
| Package/Case | D2PAK |
| Current Rating | 60A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Package Quantity | 1000 |
| Input Capacitance | 1.81nF |
| Power Dissipation | 110W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 16ns |
| Dual Supply Voltage | 60V |
| On-State Resistance | 16mR |
| Radiation Hardening | No |
| Turn-Off Delay Time | 43ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 110W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 15mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 16mR |
| Drain to Source Breakdown Voltage | 60V |
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