STB6N60M2
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Краткое описание:
600V 4.5A N-CH MOSFET D2PAK 1.06R
Дополнительная информация
N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 4.5A continuous drain current. Offers a typical 1.06 Ohm drain-source on-resistance, with a maximum of 1.2 Ohm. Designed for surface mounting in a D2PAK package, this component boasts a maximum power dissipation of 60W and operates within a temperature range of -55°C to 150°C. Key switching parameters include a turn-on delay of 9.5ns and a fall time of 22.5ns.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 4.6mm |
| Height | 9.35mm |
| Length | 10.4mm |
| Series | MDmesh™ II Plus |
| Polarity | N-CHANNEL |
| Fall Time | 22.5ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.2R |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 232pF |
| Power Dissipation | 60W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 9.5ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 24ns |
| Max Power Dissipation | 60W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.06R |
| Gate to Source Voltage (Vgs) | 25V |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.2R |
| Drain to Source Breakdown Voltage | 600V |
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