STB70NF3LLT4

Не рекомендуется для новых проектов
STB70NF3LLT4 - Stmicroelectronics
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Краткое описание: 30V 70A N-CH D2PAK MOSFET, 9.5mR RdsOn
Производитель Stmicroelectronics
Категория MOSFET
Статус производства Не рекомендуется для новых проектов (NOT RECOMMENDED)

Дополнительная информация

N-CHANNEL STripFET™ MOSFET, D2PAK package, offering 30V drain-source breakdown voltage and 70A continuous drain current. Features low 9.5mΩ drain-source resistance at nominal Vgs of 1V. Designed for surface mount with a maximum power dissipation of 100W and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 23ns and fall time of 28ns. RoHS compliant.
RoHS Compliant
Mount Surface Mount
Width 10.4mm
Height 4.6mm
Length 10.75mm
Series STripFET™
Polarity N-CHANNEL
Fall Time 28ns
Lead Free Lead Free
Packaging Tape and Reel
Rds On Max 9.5mR
Nominal Vgs 1V
Termination SMD/SMT
Package/Case D2PAK
Current Rating 70A
RoHS Compliant Yes
DC Rated Voltage 30V
Package Quantity 1000
Input Capacitance 1.65nF
Power Dissipation 100W
Threshold Voltage 1V
Turn-On Delay Time 23ns
Dual Supply Voltage 30V
Radiation Hardening No
Turn-Off Delay Time 27ns
Reach SVHC Compliant No
Max Power Dissipation 100W
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Drain to Source Resistance 9.5mR
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 70A
Drain to Source Voltage (Vdss) 30V
Drain to Source Breakdown Voltage 30V