STB75NF20
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Краткое описание:
200V 75A N-CH MOSFET D2PAK, 34mR Rds(on)
Дополнительная информация
N-channel power MOSFET featuring 200V drain-source breakdown voltage and 75A continuous drain current. Offers a low 0.028 Ohm typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component operates within a temperature range of -50°C to 150°C with a maximum power dissipation of 190W. Key switching characteristics include a 53ns turn-on delay and a 29ns fall time.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 29ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 34mR |
| Package/Case | D2PAK |
| RoHS Compliant | Yes |
| Package Quantity | 1 |
| Input Capacitance | 3.26nF |
| Power Dissipation | 190W |
| Threshold Voltage | 3V |
| Number of Elements | 1 |
| Turn-On Delay Time | 53ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 75ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 190W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Drain to Source Resistance | 34mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 34mR |
| Drain to Source Breakdown Voltage | 200V |
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