STB75NF75LT4
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Краткое описание:
75V 75A N-CH MOSFET D2PAK 11mR RdsOn
Дополнительная информация
N-Channel POWER MOSFET featuring 75V drain-source breakdown voltage and 75A continuous drain current. This surface-mount device offers a low 11mΩ maximum drain-source on-resistance and 300W maximum power dissipation. Designed with a D2PAK package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 35ns turn-on delay and 60ns fall time. RoHS compliant and lead-free.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.35mm |
| Height | 4.6mm |
| Length | 10.4mm |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 60ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 11mR |
| Package/Case | D2PAK |
| Current Rating | 75A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 75V |
| Package Quantity | 1000 |
| Input Capacitance | 4.3nF |
| Power Dissipation | 300W |
| Threshold Voltage | 2.5V |
| Number of Elements | 1 |
| Turn-On Delay Time | 35ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 10mR |
| Gate to Source Voltage (Vgs) | 15V |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 11mR |
| Drain to Source Breakdown Voltage | 75V |
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