STB7NK80ZT4
Не рекомендуется для новых проектов
Увеличить
Краткое описание:
800V N-CH MOSFET, 5.2A, 1.8R, D2PAK, Zener-Protected
Дополнительная информация
N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 5.2A continuous drain current. This surface-mount device offers a low 1.8 Ohm typical drain-source on-resistance and is housed in a D2PAK package. Key specifications include a 3.75V threshold voltage, 1.138nF input capacitance, and 125W maximum power dissipation. Operating temperature range is -55°C to 150°C, with fast switching times including 20ns turn-on and 45ns turn-off delays.
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 10.4mm |
| Height | 4.6mm |
| Length | 10.75mm |
| Series | SuperMESH™ |
| Polarity | N-CHANNEL |
| Fall Time | 20ns |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Rds On Max | 1.8R |
| Package/Case | D2PAK |
| Current Rating | 5.2A |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| Package Quantity | 1 |
| Input Capacitance | 1.138nF |
| Power Dissipation | 125W |
| Threshold Voltage | 3.75V |
| Number of Elements | 1 |
| Turn-On Delay Time | 20ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 45ns |
| Reach SVHC Compliant | No |
| Max Power Dissipation | 125W |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 1.8R |
| Gate to Source Voltage (Vgs) | 30V |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.8R |
| Drain to Source Breakdown Voltage | 800V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
