STB80NF03L-04-1
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Краткое описание:
N-CHANNEL 30V 80A 4mR 300W Through Hole I2PAK-3
Дополнительная информация
The STB80NF03L-04-1 is a high-power N-channel MOSFET with a maximum operating temperature range of -65°C to 175°C. It features a maximum power dissipation of 300W and a drain to source breakdown voltage of 30V. The device has a continuous drain current rating of 80A and a drain to source resistance of 4mR. It is packaged in the I2PAK-3 package type and is available in a rail/tube packaging configuration with 50 units per package. The STB80NF03L-04-1 is RoHS compliant and is part of the STripFET series.
| RoHS | Compliant |
| Mount | Through Hole |
| Series | STripFET™ |
| Polarity | N-CHANNEL |
| Fall Time | 95ns |
| Packaging | Rail/Tube |
| Rds On Max | 4mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 5.5nF |
| Power Dissipation | 300W |
| Turn-On Delay Time | 30ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 110ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Drain to Source Resistance | 4mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain to Source Breakdown Voltage | 30V |
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