STB80NF55-06-1
Производится
Увеличить
Краткое описание:
N-channel 55 V, 5 mOhm, 80 A I2PAK STripFET(TM) II Power MOSFET
Дополнительная информация
N-channel 55 V, 5 mOhm, 80 A I2PAK STripFET(TM) II Power MOSFET
| RoHS | Compliant |
| Mount | Through Hole |
| Series | STripFET™ II |
| Polarity | N-CHANNEL |
| Fall Time | 65ns |
| Packaging | Rail/Tube |
| Rds On Max | 6.5mR |
| Package/Case | TO-262-3 |
| RoHS Compliant | Yes |
| Package Quantity | 50 |
| Input Capacitance | 4.4nF |
| Power Dissipation | 300W |
| Turn-On Delay Time | 27ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 125ns |
| Max Power Dissipation | 300W |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Drain to Source Resistance | 6.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain to Source Breakdown Voltage | 55V |
Если у вас не открывается документ, нажмите, чтобы открыть файл в новой вкладке.
